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                                                                                                         STD2NB60
                                                 N - CHANNEL ENHANCEMENT MODE
                                                           PowerMESHTM MOSFET

         TYPE             V DSS         R DS(on)        ID
STD2NB60                 600 V         < 3.6           2.6 A
s    TYPICAL RDS(on) = 3.3 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED                                                                               3
                                                                                                     2                            3
DESCRIPTION                                                                                      1                           1
Using the latest high voltage MESH OVERLAYTM
process, SGS-Thomson has designed an
advanced family of power MOSFETs with                                            IPAK                            DPAK
outstanding performances. The new patent                                        TO-251                           TO-252
pending strip layout coupled with the Company's                               (Suffix "-1")                    (Suffix "T4")
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.                                            INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE




ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                             Value                           Uni t
      V DS       Drain-source Voltage (V GS = 0)                                                  600                              V
     V DGR       Drain- gate Voltage (R GS = 20 k)                                                600                              V
      V GS       Gate-source Voltage                                                              

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