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std2nm60-1


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                                                                                          STD2NM60
                                                                                         STD2NM60-1
                                           N-CHANNEL 600V - 2.8 - 2A DPAK/IPAK
                                          Zener-Protected MDmeshTMPower MOSFET

       TYPE            VDSS         RDS(on)           ID

    STD2NM60           600V         < 3.2            2A
    STD2NM60-1         600V         < 3.2            2A
s    TYPICAL RDS(on) = 2.8 
s    HIGH dv/dt AND AVALANCHE CAPABILITIES                                           3                                    3
                                                                                                                      2
s    100% AVALANCHE TESTED                                                       1                                1
s    LOW INPUT CAPACITANCE AND GATE
     CHARGE


                                                                                                                s)
s    LOW GATE INPUT RESISTANCE                                            DPAK                         IPAK
                                                                         TO-252

                                                                                                             t(
s    TIGHT PROCESS CONTROL AND HIGH                                                                   TO-251


                                                                                                     uc
     MANUFACTORING YIELDS

DESCRIPTION
                                                                                                   d
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
                                                                                         ro
                                                                     INTERNAL SCHEMATIC DIAGRAM
                                                                                       P
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
                                                                          le te
                                                                 so
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall


                                                              Ob
dynamic performance that is significantly better than
that of similar completition's products.

                                                            -
                                                     (s)
APPLICATIONS
The MDmeshTM family is very suitable for increase

                                                  ct
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS
                                    o du
                        Pr
     Symbol                                     Parameter                                  Value                              Unit
       VDS        Drain-source Voltage (VGS = 0)                                            600                                V

                      e
               let
      VDGR        Drain-gate Voltage (RGS = 20 k)                                           600                                V
       VGS        Gate- source Voltage                                                      



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