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                                                                                                STD7NB20
                                                                                               STD7NB20-1
                                                N-CHANNEL 200V - 0.3 - 7A DPAK/IPAK
                                                             PowerMESHTM MOSFET

         TYPE               VDSS         RDS(on)            ID

    STD7NB20               200 V        < 0.40          7A
    STD7NB20-1             200 V        < 0.40          7A
s    TYPICAL RDS(on) = 0.3                                                               3                                   3
                                                                                                                         2
s    EXTREMELY HIGH dv/dt CAPABILITY                                                1                                1
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED                                                   DPAK                          IPAK
s    ADD SUFFIX "T4" FOR ORDERING IN TAPE &                                 TO-252                         TO-251
     REEL

DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding                         INTERNAL SCHEMATIC DIAGRAM
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.



APPLICATIONS
s SWITH MODE POWER SUPPLIES (SMPS)

s DC-DC CONVERTERS FOR TELECOM,

  INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                      Value                             Unit
       VDS        Drain-source Voltage (VGS = 0)                                                200                               V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                               200                               V
       VGS        Gate- source Voltage                                                          

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