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STU40N2LH5
N-channel 25 V, 0.01 , 40 A, DPAK, IPAK
STripFETTM V Power MOSFET
Features
Type VDSS RDS(on) max ID
STD40N2LH5 25 V 0.0118 40 A
STU40N2LH5 25 V 0.0124 40 A
3
3 2
RDS(on) * Qg industry benchmark 1 1
Extremely low on-resistance RDS(on)
DPAK IPAK
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This STripFETTM V Power MOSFET technology
is among the latest improvements, which have
been especially tailored to achieve very low on-
state resistance providing also one of the best-in-
class figure of merit (FOM).
Table 1. Device summary
Order codes Marking Package Packaging
STD40N2LH5 40N2LH5 DPAK Tape and reel
STU40N2LH5 40N2LH5 IPAK Tube
September 2009 Doc ID 14919 Rev 3 1/15
www.st.com 15
Contents STD40N2LH5, STU40N2LH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 14919 Rev 3
STD40N2LH5, STU40N2LH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 25 V
VGS Gate-Source voltage
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