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STU60N3LH5, STU60N3LH5-S
N-channel 30 V, 0.0072 48 A DPAK, IPAK, Short IPAK, TO-220
,
STripFETTM V Power MOSFET
Features
Order codes VDSS RDS(on) max ID
3
STD60N3LH5 30 V 0.008 48 A 2
3 1
STP60N3LH5 30 V 0.0084 48 A 2
1
IPAK
STU60N3LH5 30 V 0.0084 48 A TO-220
STU60N3LH5-S 30 V 0.0084 48 A
RDS(on) * Qg industry benchmark 3
2
Extremely low on-resistance RDS(on) 3 1
1
Very low switching gate charge Short IPAK
DPAK
High avalanche ruggedness
Low gate drive power losses
Application Figure 1. Internal schematic diagram
Switching applications
Description
This STripFETTMV Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit.
Table 1. Device summary
Order codes Marking Package Packaging
STD60N3LH5 60N3LH5 DPAK Tape and reel
STP60N3LH5 60N3LH5 TO-220
STU60N3LH5 60N3LH5 IPAK Tube
STU60N3LH5-S 60N3LH5 Short IPAK
April 2011 Doc ID 14079 Rev 4 1/21
www.st.com 21
Contents STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 Doc ID 14079 Rev 4
STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V
VGS Gate-Source voltage
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