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                                                                                                             STD845DN40

                             Dual NPN high voltage transistors in a single package
                                                                                                                                   Preliminary data


Features
    Low VCE(sat)
    Simplified circuit design
    Reduced component count
                                                                                                         8
    Fast switching speed
                                                                                                                        4
                                                                                                              1
Applications
    Compact fluorescent lamp (CFL) 220 V mains                                                               DIP-8
    Electronic ballast for fluorescent lighting

Description
                                                                             Figure 1.         Internal schematic diagram
The device is a dual NPN high voltage power
transistor manufactured using multi-epitaxial
planar technology. It is housed in dual-island DIP-
8 package with separated terminals to provide a
high degree of assembly flexibility.




Table 1.          Device summary
   Order code                   Marking                               Package                                          Packaging

   STD845DN40                 D845DN40                                   DIP-8                                              Tube




April 2010                                                   Doc ID 17211 Rev 2                                                               1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to                     www.st.com   10
change without notice.
Electrical ratings                                                                            STD845DN40


1           Electrical ratings

            Table 2.       Absolute maximum ratings
             Symbol                              Parameter                            Value         Unit

               VCBO      Collector-base voltage (IE = 0)                               700           V
               VCEO      Collector-emitter voltage (IB = 0)                            400           V
               VEBO      Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms)        V(BR)EBO         V
                IC       Collector current                                              4            A
                ICM      Collector peak current (tP < 5 ms)                             8            A
                IB       Base current                                                   2            A
                IBM      Base peak current (tP < 5 ms)                                  4            A
                         Total dissipation at Tamb = 25 

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