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STF9NM60N, STP9NM60N
N-channel 600 V, 0.63 6.5 A TO-220, TO-220FP, DPAK
,
MDmeshTM II Power MOSFET
Features
VDSS RDS(on)
Order codes ID
(@Tjmax) max.
3 3
2
2
STD9NM60N 1 1
TO-220FP TO-220
STF9NM60N 650 V < 0.745 6.5 A
STP9NM60N
100% avalanche tested 3
Low input capacitance and gate charge 1
Low gate input resistance DPAK
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This series of devices is realized with the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1. Device summary
Order codes Marking Packages Packaging
STD9NM60N DPAK Tape and reel
STF9NM60N 9NM60N TO-220FP
Tube
STP9NM60N TO-220
October 2010 Doc ID 18063 Rev 1 1/16
www.st.com 16
Contents STD9NM60N, STF9NM60N, STP9NM60N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 18063 Rev 1
STD9NM60N, STF9NM60N, STP9NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220, DPAK TO-220FP
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate- source voltage
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