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N-channel 200 V, 0.010 , 140 A, ISOTOP
STripFETTM II with fast recovery diode Power MOSFET
Features
Type VDSS RDS(on) max ID
STE140NF20D 200 V < 0.012 140 A
Exceptional dv/dt capability
Low gate charge
100% avalanche tested
Application ISOTOP
Switching applications
Description
This Power MOSFET is produced using Figure 1. Internal schematic diagram
STMicroelectronics' unique STripFETTM process,
which is specifically designed to minimize input
capacitance and gate charge. The device offers
extremely fast switching performance thanks to
the intrinsic fast body diode, making the device
ideal for hard switching topologies.
Table 1. Device summary
Order code Marking Package Packaging
STE140NF20D 140NF20D ISOTOP Tube
July 2010 Doc ID 15299 Rev 3 1/13
www.st.com 13
Contents STE140NF20D
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 15299 Rev 3
STE140NF20D Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 200 V
VGS Gate-source voltage
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