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                                                                             STE48NM50
                    N-CHANNEL 550V @ Tjmax - 0.08 - 48A ISOTOP
                                             MDmeshTM MOSFET

Table 1: General Features                             Figure 1: Package
      TYPE           VDSS     RDS(on)       ID
                   (@Tjmax)
 STE48NM50          550V      < 0.1        48 A
s   TYPICAL RDS(on) = 0.08
s   HIGH dv/dt AND AVALANCHE CAPABILITIES
s   100% AVALANCHE TESTED
s   LOW INPUT CAPACITANCE AND GATE
    CHARGE
s   LOW GATE INPUT RESISTANCE
s   TIGHT PROCESS CONTROL AND HIGH                                        ISOTOP
    MANUFACTURING YIELDS

DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-    Figure 2: Internal Schematic Diagram
cess with the Company's PowerMESHTM horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion's products.


APPLICATIONS
The MDmeshTM family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.




Table 2: Order Codes
       SALES TYPE               MARKING               PACKAGE                  PACKAGING
       STE48NM50                E48NM50                ISOTOP                      TUBE




                                                                                   Rev. 2
March 2005                                                                                   1/9
STE48NM50

Table 3: Absolute Maximum ratings
      Symbol                                Parameter                                 Value             Unit
        VGS       Gate- source Voltage                                                 

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