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ste53na50


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                                                                                  STE53NA50
                                                 N - CHANNEL ENHANCEMENT MODE
                                                     FAST POWER MOS TRANSISTOR
        TYPE              V DSS         R DS(on)        ID
STE53NA50                500 V        < 0.085          53 A


s   TYPICAL RDS(on) = 0.075 
s   HIGH CURRENT POWER MODULE
s   AVALANCHE RUGGED TECHNOLOGY
s   VERY LARGE SOA - LARGE PEAK POWER
    CAPABILITY
s   EASY TO MOUNT
s   SAME CURRENT CAPABILITY FOR THE
    TWO SOURCE TERMINALS
s   EXTREMELY LOW Rth (Junction to case)                                     ISOTOP
s   VERY LOW INTERNAL PARASITIC
    INDUCTANCE
s   ISOLATED PACKAGE UL RECOGNIZED


APPLICATIONS                                                      INTERNAL SCHEMATIC DIAGRAM
s SMPS & UPS
s MOTOR CONTROL

s WELDING EQUIPMENT

s OUTPUT STAGE FOR PWM, ULTRASONIC

  CIRCUITS




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                            Value          Unit
     V DS      Drain-source Voltage (V GS = 0)                               500               V
     V DGR     Drain- gate Voltage (R GS = 20 k)                             500               V
     V GS      Gate-source Voltage                                          



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