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                                                                                             STE53NC50
                                                N-CHANNEL 500V - 0.070 - 53A ISOTOP
                                                             PowerMeshTMII MOSFET

         TYPE               VDSS         RDS(on)            ID

    STE53NC50               500V        < 0.08          53 A
n    TYPICAL RDS(on) = 0.07 
n    EXTREMELY HIGH dv/dt CAPABILITY
n    100% AVALANCHE TESTED
n    NEW HIGH VOLTAGE BENCHMARK
n    GATE CHARGE MINIMIZED


                                                                                         ISOTOP
DESCRIPTION
The PowerMESHTMII is the evolution of the first
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate                       INTERNAL SCHEMATIC DIAGRAM
charge and ruggedness.



APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVER



ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                   Value               Unit
       VDS        Drain-source Voltage (VGS = 0)                                             500                 V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                            500                 V
       VGS        Gate- source Voltage                                                       

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