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                                                                                  STF13NM60N-H
            N-channel 600 V, 0.28  11 A MDmeshTM II Power MOSFET
                                  ,
                                                       in TO-220FP

Features
                       VDSS         RDS(on)
       Type                                        ID
                     (@Tjmax)        max
 STF13NM60N-H            650 V      < 0.36        11 A

   100% avalanche tested
   Low input capacitance and gate charge                                                                 3
                                                                                                     2
   Low gate input resistance                                                                     1



Application                                                                            TO-220FP

   Switching applications

Description
                                                               Figure 1.      Internal schematic diagram
This series of devices implements second
generation MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.




Table 1.       Device summary
           Order codes                     Marking                      Packages                         Packaging

      STF13NM60N-H(1)                      13NM60N                      TO-220FP                             Tube
1. The device meets ECOPACK

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