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                                                                                   STF26NM60N-H
         N-channel 600 V, 0.135  20 A MDmeshTM II Power MOSFET
                                ,
                                                     in TO-220FP

Features
                                    RDS(on)
       Type              VDSS                      ID
                                     max
 STF26NM60N-H          600 V       < 0.165        20 A

   100% avalanche tested
                                                                                                          3
   Low input capacitance and gate charge                                                              2
                                                                                                  1
   Low gate input resistance
                                                                                       TO-220FP
Application
   Switching applications

Description
                                                               Figure 1.      Internal schematic diagram
This series of devices implements second
generation MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.




Table 1.       Device summary
           Order codes                     Marking                       Package                      Packaging

      STF26NM60N-H(1)                      26NM60N                      TO-220FP                              Tube
1. The device meets ECOPACK

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