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stfw4n150_stp4n150_stw4n150


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                                                                      STFW4N150
                                                              STP4N150, STW4N150
            N-channel 1500 V, 5 , 4 A, PowerMESHTM Power MOSFET
                                          in TO-220, TO-247, TO-3PF

Features
     Type       VDSS    RDS(on) max     ID       Pw
STFW4N150      1500 V        <7         4A      63 W
                             <7
                                                                                 3
   STP4N150    1500 V                   4A     160 W                     1
                                                                             2                                                3
                                                                                                                          2
   STW4N150    1500 V        <7         4A     160 W            TO-220
                                                                                                                      1

                                                                                                            TO-247
    100% avalanche tested
    Intrinsic capacitances and Qg minimized
    High speed switching                                                                          2
                                                                                                      3
                                                                                              1

    Fully isolated TO-3PF plastic packages                                           TO-3PF
    Creepage distance path is 5.4 mm (typ.) for
    TO-3PF

Application                                                Figure 1.      Internal schematic diagram.

    Switching applications

Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company's proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.



Table 1.      Device summary
       Order codes                    Marking                    Package                                  Packaging

       STFW4N150                      4N150                          TO-3PF                                 Tube
        STP4N150                      P4N150                         TO-220                                 Tube
        STW4N150                      W4N150                         TO-247                                 Tube




July 2009                                       Doc ID 11262 Rev 9                                                            1/15
                                                                                                                   www.st.com        15
Contents                                                                 STFW4N150, STP4N150, STW4N150


Contents

1          Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2          Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
           2.1      Electrical characteristics (curves)               ............................ 6

3          Test circuits          .............................................. 9

4          Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5          Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14




2/15                                          Doc ID 11262 Rev 9
STFW4N150, STP4N150, STW4N150                                                                        Electrical ratings


1        Electrical ratings

         Table 2.       Absolute maximum ratings
                                                                                     Value
           Symbol                    Parameter                                                                  Unit
                                                                 TO-220            TO-247            TO-3PF

             VDS       Drain-source voltage (VGS = 0)                                1500                        V
             VGS       Gate- source voltage                                          



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