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                                                                          STGB3NB60SD
                                                             N-CHANNEL 3A - 600V D2PAK
                                                                    Power MESHTM IGBT

        TYPE                VCES         VCE(sat)   Ic

    STGB3NB60SD            600 V         <1.5 V     3A
s    HIGH INPUT IMPEDANCE
     (VOLTAGE DRIVEN)
s    VERY LOW ON-VOLTAGE DROP (Vcesat)
s    HIGH CURRENT CAPABILITY                                                              3
s    OFF LOSSES INCLUDE TAIL CURRENT                                                  1

s    INTEGRATED FREEWHEELING DIODE                                               D2PAK
s    SURFACE-MOUNTING D2PAK (TO-263)                                             TO-263
     POWER PACKAGE IN TAPE & REEL                                              (suffix"T4")
     (SUFFIX "T4")

DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed
                                                             INTERNAL SCHEMATIC DIAGRAM
an advanced family of IGBTs, the PowerMESHTM IGBTs,
with outstanding perfomances. The suffix "S" identifies a
family optimized to achieve minimum on-voltage drop for
low frequency applications (<1kHz).


APPLICATIONS
s GAS DISCHARGE LAMP

s STATIC RELAYS

s MOTOR CONTROL




ABSOLUTE MAXIMUM RATINGS
     Symbol                          Parameter                          Value                 Unit
      VCES        Collector-Emitter Voltage (VGS = 0)                    600                   V
       VGE        Gate-Emitter Voltage                                  

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