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                                                                           STGD3NB60H
                                                              N-CHANNEL 3A - 600V - DPAK
                                                                     PowerMESHTM IGBT

         TYPE           VCES      VCE(sat)         IC

    STD3NB60H          600 V       < 2.8 V       3A
s    HIGH INPUT IMPEDANCE
s    LOW ON-VOLTAGE DROP (Vcesat)
s    OFF LOSSES INCLUDE TAIL CURRENT                                                     3
s    LOW GATE CHARGE                                                                 1
s    HIGH CURRENT CAPABILITY
s    VERY HIGH FREQUENCY OPERATION
s    CO-PACKAGED WITH TURBOSWITCHT                                           DPAK
s    TYPICAL SHORT CIRCUIT WITHSTAND TIME
     5MICROS S-family, 4 micro H family
s    ANTIPARALLEL DIODE

DESCRIPTION                                                        INTERNAL SCHEMATIC DIAGRAM
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.

APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS

s SMPS and PFC IN BOTH HARD SWITCH AND

  RESONANT TOPOLOGIES




ABSOLUTE MAXIMUM RATINGS
     Symbol                            Parameter                             Value           Unit
      VCES      Collector-Emitter Voltage (VGS = 0)                           600               V
      VECR      Emitter-Collector Voltage                                     20                V
       VGE      Gate-Emitter Voltage                                         

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