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                                                                  STGD3NB60SD
                                                    N-CHANNEL 3A - 600V - DPAK
                                                           PowerMESHTM IGBT

      TYPE          VCES      VCE(sat)     IC

STGD3NB60SD         600 V     < 1.5 V     3A
s   HIGH INPUT IMPEDANCE (VOLTAGE
    DRIVEN)
                                                                           3
s   VERY LOW ON-VOLTAGE DROP (Vcesat)                                  1
s   HIGH CURRENT CAPABILITY
s   INTEGRATED WHEELING DIODE                                      DPAK
s   OFF LOSSES INCLUDE TAIL CURRENT



DESCRIPTION

Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has          INTERNAL SCHEMATIC DIAGRAM
designed an advanced family of IGBTs, the
PowerMESHTM IGBTs, with outstanding
performances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop for
low frequency applications (<1kHz).



APPLICATIONS
s MOTOR CONTROL

s GAS DISCHARGE LAMP

s STATIC RELAYS




ORDERING INFORMATION
       SALES TYPE                  MARKING              PACKAGE            PACKAGING
      STGD3NB60SDT4               GD3NB60SD              DPAK              TAPE & REEL




May 2004                                                                                 1/9
STGD3NB60SD

ABSOLUTE MAXIMUM RATINGS
      Symbol                           Parameter                                      Value                      Unit
       VCES        Collector-Emitter Voltage (VGS = 0)                                 600                        V
       VGE         Gate-Emitter Voltage                                                

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