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                                                                    STGE50NB60HD
                                                        N-CHANNEL 50A - 600V - ISOTOP
                                                                   PowerMESHTM IGBT

        TYPE               VCES        VCE(sat)        IC

 STGY50NB60HD              600 V        < 2.8 V      50 A
s   HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s   LOW ON-VOLTAGE DROP (Vcesat)
s   OFF LOSSES INCLUDE TAIL CURRENT
s   LOW GATE CHARGE
s   HIGH CURRENT CAPABILITY
s   VERY HIGH FREQUENCY OPERATION
s   CO-PACKAGED WITH TURBOSWITCHTM                                       ISOTOP
    ANTIPARALLEL DIODE



DESCRIPTION                                                     INTERNAL SCHEMATIC DIAGRAM
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequen-cy applications (up to 120kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.

APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCH AND

  RESONANT TOPOLOGIES




ABSOLUTE MAXIMUM RATINGS
    Symbol                               Parameter                        Value          Unit
     VCES        Collector-Emitter Voltage (VGS = 0)                       600               V
     VGE         Gate-Emitter Voltage                                     

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