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                                                                  STGP10NB37LZ
                                      N-CHANNEL CLAMPED 20A - TO-220
                                 INTERNALLY CLAMPED PowerMeshTM IGBT

        TYPE           VCES        VCE(sat)          IC

    STGP10NB37LZ    CLAMPED        < 1.8 V        20 A
s    POLYSILICON GATE VOLTAGE DRIVEN
s    LOW THRESHOLD VOLTAGE
s    LOW ON-VOLTAGE DROP
s    LOW GATE CHARGE
s    HIGH CURRENT CAPABILITY                                                              3
                                                                                      2
s    HIGH VOLTAGE CLAMPING FEATURE                                                1

                                                                      TO-220
DESCRIPTION

Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has                INTERNAL SCHEMATIC DIAGRAM
designed an advanced family of IGBTs, the
PowerMESH TM IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.



APPLICATIONS
s AUTOMOTIVE IGNITION




ABSOLUTE MAXIMUM RATINGS
     Symbol                           Parameter                        Value                  Unit
      VCES     Collector-Emitter Voltage (VGS = 0)                   CLAMPED                   V
      VECR     Reverse Battery Protection                               18                     V
       VGE     Gate-Emitter Voltage                                  CLAMPED                   V
       IC      Collector Current (continuos) at TC = 100

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