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                                                                     STGW30NB60HD
                                                          N-CHANNEL 30A - 600V - TO-247
                                                                    PowerMESHTM IGBT

       TYPE          VCES       VCE(sat) (Max)       IC

STGW30NB60HD         600 V         < 2.8 V          30 A
s   HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s   LOW ON-VOLTAGE DROP (VCESAT)
s   LOW GATE CHARGE
s   HIGH CURRENT CAPABILITY
                                                                                                 3
s   VERY HIGH FREQUENCY OPERATION                                                            2
                                                                                         1
s   OFF LOSSES INCLUDE TAIL CURRENT
s   CO-PACKAGED WITH TORBOSWITCHTM
    ANTIPARALLEL DIODE                                                         TO-247



DESCRIPTION
Using the latest high voltage technology based on a              INTERNAL SCHEMATIC DIAGRAM
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized to
achieve very low switching times for high frequency
applications (<120KHz).

APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS

s WELDING EQUIPMENTS

s SMPS AND PFC IN BOTH HARD SWITCH AND

  RESONANT TOPOLOGIES




ABSOLUTE MAXIMUM RATINGS
    Symbol                           Parameter                                 Value                         Unit
     VCES     Collector-Emitter Voltage (VGS = 0)                                600                           V
     VECR     Emitter-Collector Voltage                                          20                            V
     VGE      Gate-Emitter Voltage                                              

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