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                                                                                               STK2N80
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR

        TYPE              V DSS         R DS( on)        ID
STK2N80                  800 V           < 7            2.1 A

s   TYPICAL RDS(on) = 5 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
                                                                                                            3
s   LOW INPUT CAPACITANCE                                                                           1
                                                                                                        2
                                                                                      3
s   LOW GATE CHARGE                                                               2
                                                                              1
s   APPLICATION ORIENTED
    CHARACTERIZATION
                                                                     SOT-82                    SOT-194
APPLICATIONS                                                                                   (option)
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING


                                                                    INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                                      Value                     Unit
     VD S      Drain-source Voltage (V GS = 0)                                         800                       V
     V DG R    Drain- gate Voltage (R GS = 20 k)                                       800                       V
     V GS      Gate-source Voltage                                                    

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