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STL106D
High voltage fast-switching NPN power transistor
Features
NPN transistor
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
Compact fluorescent lamps at 110V A.C. mains
Flyback and forward single transistor low power
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uc
TO-92
converters at 110V A.C. mains
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Description
The device is manufactured using multi-epitaxial
Figure 1.
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Internal schematic diagram
Planar technology for high switching speeds and
medium voltage capability. It uses a Cellular
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Emitter structure with planar edge termination to
enhance switching speeds while maintaining the
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wide RBSOA. The device is designed for use in
lighting applications and low cost switch-mode
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power supplies.
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Table 1. let Device summary
O bsOrder code
STL106D
Marking
L106D
Package
TO-92
Packaging
Bulk
March 2008 Rev 1 1/8
www.st.com 8
STL106D
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
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2/8
STL106D Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (V BE = 0) 400 V
VCEO Collector-emitter voltage (IB = 0) 230 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 1.5 A
ICM Collector peak current (tP < 5 ms) 3 A
IB Base current 0.4 A
IBM Base peak current (tP < 5 ms) 0.8 A
Ptot Total dissipation at Tc = 25 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo