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STL100NH3LL
N-channel 30 V - 0.0032 - 25 A - PowerFLATTM (6x5)
STripFETTM III Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STL100NH3LL 30 V <0.0035 25A (1)
1. The value is rated according Rthj-pcb
Improved die-to-footprint ratio
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Very low profile package (1 mm max) PowerFLATTM( 6x5 )
t(
Very low thermal resistance
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Conduction losses reduced
Switching losses reduced
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Application
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Switching applications Figure 1.
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Internal schematic diagram
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Description
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This series utilizes the last advanced design rules
of ST's proprietary STripFETTM technology. This
-
(s)
process complete to unique metallization
technique realised the most advanced low voltage
ct
Power MOSFET in PowerFLATTM(6x5). The chip-
du
scaled PowerFLATTM package allows a significant
board space saving, still boosting the
performance.
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Table 1. Device summary
Order code Marking Package Packaging
O STL100NH3LL L100NH3LL PowerFLATTM (6x5) Tape and reel
March 2008 Rev 11 1/12
www.st.com 12
Contents STL100NH3LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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2/12
STL100NH3LL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS(1) Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo