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N-CHANNEL 100V - 0.025 - 35A PowerFLATTM
LOW GATE CHARGE STripFETTM MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STL35NF10 100 V < 0.030 35 A
s TYPICAL RDS(on) = 0.025
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE
DESCRIPTION PowerFLATTM(6x5)
This Power MOSFET is the second generation of (Chip Scale Package)
STMicroelectronics unique "STripFETTM" technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLATTM package allows a significant reduction in
board space without compromising performance. INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH EFFICIENCY ISOLATED DC/DC
CONVETERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage
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