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STL65N3LLH5
N-channel 30 V, 0.0048 19 A - PowerFLATTM (6x5)
,
STripFETTM V Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STL65N3LLH5 30 V <0.0058 19 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on) PowerFLATTM ( 6x5 )
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications Figure 1. Internal schematic diagram
Description
This product utilizes the 5th generation of design
rules of ST's proprietary STripFETTM technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1. Device summary
Order code Marking Package Packaging
STL65N3LLH5 65N3LLH5 PowerFLATTM (6x5) Tape and reel
September 2008 Rev 4 1/12
www.st.com 12
Contents STL65N3LLH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STL65N3LLH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo