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High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Integrated antiparallel collector-emitter diode
Application
Electronic ballast for fluorescent lighting
TO-92
Description
The device is manufactured using high voltage Figure 1. Internal schematic diagram
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STL series is designed for use in compact
fluorescent lamps.
Table 1. Device summary
Order codes Marking (1) Package Packaging
L73DL
STL73D TO-92 Bag
L73DH
L73DL
STL73D-AP TO-92 Ammopack
L73DH
1. The product is classified in DC current gain group L and group H, see Table 5: hFE classification. STMicroelectronics
reserves the right to ship from any group according to production availability.
November 2009 Doc ID 15147 Rev 2 1/9
www.st.com 9
Electrical ratings STL73D
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
Emitter-base voltage
VEBO V(BR)EBO V
(IC = 0, IB = 0.5 A, tP < 10
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