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STL85N6F3
N-channel 60 V, 0.005 , 19 A PowerFLATTM (6x5)
STripFETTM Power MOSFET
Preliminary Data
Features
RDS(on)
Type VDSS ID
max
STL85N6F3 60 V < 0.0057 19 A (1)
1. The value is rated according Rthj-pcb
Extremely low on-resistance RDS(on)
100% avalanche tested PowerFLATTM (6x5)
Application
Switching applications
Description
Figure 1. Internal schematic diagram
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique "single feature size"
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Table 1. Device summary
Order code Marking Package Packaging
STL85N6F3 85N6F3 PowerFLATTM (6x5) Tape and reel
January 2009 Rev 1 1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10
change without notice.
Contents STL85N6F3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuit ................................................ 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10
STL85N6F3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 60 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo