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STL9N3LLH5
N-channel 30 V, 0.015 9 A, PowerFLATTM (3.3x3.3)
,
STripFETTM V Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STL9N3LLH5 30 V < 0.019 9 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
PowerFLATTM(3.3x3.3)
High avalanche ruggedness
(Chip scale package)
Low gate drive power losses
Applications
Switching applications Figure 1. Internal schematic diagram
Description
This product utilizes the 5th generation of design
rules of ST's proprietary STripFETTM technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1. Device summary
Order code Marking Package Packaging
STL9N3LLH5 9N3L PowerFLATTM (3.3x3.3) Tape and reel
July 2009 Doc ID 16012 Rev 1 1/12
www.st.com 12
Contents STL9N3LLH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits .............................................. 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/12 Doc ID 16012 Rev 1
STL9N3LLH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo