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STN3N40K3
N-channel 400 V, 3 1.8 A SOT-223
,
SuperMESH3TM Power MOSFET
Features
Order code VDSS RDS(on) max ID PW
STN3N40K3 400 V < 3.4 1.8 A 3.3 W 2
100% avalanche tested
3
Extremely high dv/dt capability 2
1
Gate charge minimized
SOT-223
Very low intrinsic capacitance
Improved diode reverse rcovery characteristics
Zener-protected
Application
Switching applications Figure 1. Internal schematic diagram
D(2)
Description
The device is made using the SuperMESH3TM
Power MOSFET technology that is obtained via
improvements applied to STMicroelectronics'
SuperMESH3TM technology combined with a new G(1)
optimized vertical structure. The resulting product
has an extremely low on resistance, superior
dynamic performance and high avalanche
capability, making it especially suitable for the
most demanding applications.
S(3)
AM01476v1
Table 1. Device summary
Order code Marking Package Packaging
STN3N40K3 3N40K3 SOT-223 Tape and reel
April 2011 Doc ID 17697 Rev 2 1/13
www.st.com 13
Contents STN3N40K3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics ................................... 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 17697 Rev 2
STN3N40K3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain source voltage 400 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo