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N-CHANNEL 60V - 0.1 - 2A SOT-223
STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
STN2NF06L 60 V <0.12 2A
s TYPICAL RDS(on) = 0.1
s EXTREMELY HIGH dv/dt CAPABILITY 2
s 100% AVALANCHE TESTED
s AVALANCHE RUGGED TECHNOLOGY
3
s LOW THRESHOLD DRIVE 2
1
DESCRIPTION
SOT-223
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k) 60 V
VGS Gate- source Voltage
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