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STN4NF20L
N-channel 200 V, 1.1 1 A SOT-223
,
low gate charge STripFETTM II Power MOSFET
Features
RDS(on)
Order code VDSS ID
max.
STN4NF20L 200 V < 1.5 1A 2
100% avalanche tested 3
Low gate charge
2
1
Exceptional dv/dt capability SOT-223
Application
Switching applications
Description
This N-channel 200 V realized with Figure 1. Internal schematic diagram
STMicroelectronics unique STripFETTM process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high
efficiency isolated DC-DC converters.
Table 1. Device summary
Order code Marking Package Packaging
STN4NF20L 4NF20L SOT-223 Tape and reel
October 2010 Doc ID 17445 Rev 2 1/12
www.st.com 12
Contents STN4NF20L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 17445 Rev 2
STN4NF20L Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
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