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                                                                                               STN851

                              Low voltage fast-switching NPN power transistor

Features
   Very low collector to emitter saturation voltage
   High current gain characteristic
                                                                           4
   Fast-switching speed
                                                                                           3
                                                                                       2
Applications                                                                       1


   Emergency lighting
                                                                               SOT-223
   Voltage regulators
   Relay drivers
   High efficiency low voltage switching
   applications
                                                          Figure 1.   Internal schematic diagram
Description
The device is manufactured in Planar Technology
with "Base Island" layout.
The resulting transistor shows exceptional high
gain performance coupled with very low
saturation voltage.




Table 1.      Device summary
   Order code           Marking                       Package                          Packaging

     STN851               N851                        SOT-223                       Tape and reel




March 2009                                            Rev 7                                              1/10
                                                                                                    www.st.com   10
Electrical ratings                                                              STN851


1           Electrical ratings

            Table 2.       Absolute maximum ratings
             Symbol                              Parameter           Value        Unit

               VCBO      Collector-base voltage (IE = 0)              150          V
               VCEO      Collector-emitter voltage (IB = 0)           60           V
               VEBO      Emitter-base voltage (IC = 0)                 7           V
                IC       Collector current                             5           A
                ICM      Collector peak current (tP < 5 ms)           10           A
                 IB      Base current                                  1           A
                IBM      Base peak current (tP < 5 ms)                 2           A
                Ptot     Total dissipation at Tamb = 25 

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