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                                                                                                             STP3NB100
                                                                                                           STP3NB100FP
                             N-CHANNEL 1000V - 5.3 - 3A TO-220/TO-220FP
                                                  PowerMeshTM MOSFET
                                                                                                                               PRELIMINARY DATA
         TYPE                 VDSS          RDS(on)            ID

 STP3NB100                  1000 V           <6               3A
 STP3NB100FP                1000 V           <6               3A
s   TYPICAL RDS(on) = 5.3
s   EXTREMELY HIGH dv/dt CAPABILITY
s   100% AVALANCHE TESTED
s   VERY LOW INTRINSIC CAPACITANCES                                                                                3                                  3
                                                                                                               2                                  2
s   GATE CHARGE MINIMIZED                                                                                  1                                  1

                                                                                           TO-220                              TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-                                    INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
  EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
    Symbol                                      Parameter                                                              Value                          Unit
                                                                                                STP3NB100                    STP3NB100FP
      VDS          Drain-source Voltage (VGS = 0)                                                                      1000                            V
     VDGR          Drain-gate Voltage (RGS = 20 k)                                                                     1000                            V
      VGS          Gate- source Voltage                                                                                

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