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                                                                            STP10NB20
                                                                          STP10NB20FP
                                           N - CHANNEL ENHANCEMENT MODE
                                                     PowerMESHTM MOSFET
                                                                                             PRELIMINARY DATA

         TYPE             V DSS      R DS(on)         ID
STP10NB20                200 V      < 0.40           10 A
STP10NB20FP              200 V      < 0.40            6A
s    TYPICAL RDS(on) = 0.25 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED
                                                                                  3                             3
                                                                              2                             2
DESCRIPTION                                                               1                             1
Using the latest high voltage MESH OVERLAYTM
process, SGS-Thomson has designed an                             TO-220                      TO-220FP
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge              INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE


ABSOLUTE MAXIMUM RATINGS



    Symbol                              Parameter                         Value                         Unit
                                                                  STP10NB20 STP10NB20FP
     V DS        Drain-source Voltage (V GS = 0)                                      200                   V
     V DGR       Drain- gate Voltage (R GS = 20 k)                                    200                   V
      V GS       Gate-source Voltage                                                  

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