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                                                 STP11NM60A
                                 STP11NM60AFP - STB11NM60A-1
            N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK
                                     MDmeshTMPower MOSFET

         TYPE          VDSS       RDS(on)      ID

     STP11NM60A        600 V      <0.45       11 A
     STP11NM60AFP      600 V      <0.45       11 A
     STB11NM60A-1      600 V      <0.45       11 A
 n    TYPICAL RDS(on) = 0.4                                                                                     3
                                                                          2
                                                                              3
                                                                                                             12
 n    HIGH dv/dt                                                      1
 n    LOW INPUT CAPACITANCE AND GATE
      CHARGE                                                     TO-220                              I2PAK


                                                                                                        s)
 n    LOW GATE INPUT RESISTANCE


                                                                                                     t(
                                                                                                 3
                                                                                             2



                                                                                         uc
                                                                                         1
                                                                                   TO-220FP
 DESCRIPTION
                                                                                       d
                                                                                    ro
 The MDmeshTM is a new revolutionary MOSFET
 technology that associates the Multiple Drain pro-
 cess with the Company's PowerMESHTM horizontal
                                                                                  P
                                                                      te
 layout. The resulting product has an outstanding low        INTERNAL SCHEMATIC DIAGRAM
 on-resistance, impressively high dv/dt. The adoption
 of the Company's proprietary strip technique yields
                                                                   le
                                                         so
 overall dynamic performance that is significantly
 better than that of similar competition's products.



                                                    - Ob
                                        (s)
 APPLICATIONS
 The MDmeshTM family is very suitable for increasing

                                     ct
 power density of high voltage converters allowing


                              du
 system miniaturization and higher efficiencies.


                            o
                    e Pr
          o let
O bs
 ORDERING INFORMATION
         SALES TYPE             MARKING                 PACKAGE                       PACKAGING
         STP11NM60A             P11NM60A                 TO-220                          TUBE
        STP11NM60AFP           P11NM60AFP               TO-220FP                         TUBE

        STB11NM60A-1            B11NM60A                 I2PAK                           TUBE




 March 2002                                                                                                   1/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1

ABSOLUTE MAXIMUM RATINGS
    Symbol                           Parameter                                           Value                                    Unit
                                                                          STP11NM60A
                                                                                                          STP11NM60AFP
                                                                         STB11NM60A-1
       VDS       Drain-source Voltage (VGS = 0)                                              600                                   V
       VDGR      Drain-gate Voltage (RGS = 20 k)                                             600                                   V
       VGS       Gate- source Voltage                                                        

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