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STP11NM80 - STB11NM80
STF11NM80 - STW11NM80
N-CHANNEL 800V - 0.35 - 11A TO-220/FP/D2PAK/TO-247
MDmeshTMPower MOSFET
TARGET DATA
TYPE VDSS RDS(on) Rds(on)*Qg ID
STP11NM80 800 V < 0.40 14 *nC 11 A
STF11NM80 800 V < 0.40 14 *nC 11 A
STB11NM80 800 V < 0.40 14 *nC 11 A 3 1
3
STW11NM80 800 V < 0.40 14 *nC 11 A 1
2
D2PAK
TYPICAL RDS(on) = 0.35 TO-220
LOW GATE INPUT RESISTANCE
LOW INPUT CAPACITANCE AND GATE
CHARGE
BEST R ds(on) * Qg IN THE INDUSTRY 2
3
1
3
2
1 TO-220FP
TO-247
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro- INTERNAL SCHEMATIC DIAGRAM
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The 800 V MDmeshTM family is very suitable for sin-
gle switch applications in particular for Flyback and
Forward converter topologies.
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP11NM80 P11NM80 TO-220 TUBE
STF11NM80 F11NM80 TO-220FP TUBE
STB11NM80T4 B11NM80 D2PAK TAPE & REEL
STW11NM80 W11NM80 TO-247 TUBE
June 2003 1/10
STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220/D2PAK TO-220FP
TO-247
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo