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N-channel 40 V, 3.8 m , 80 A, TO-220
STripFETTM VI DeepGATETM Power MOSFET
Features
RDS(on)
Order code VDSS ID
max.
STP120N4F6 40 V 4.3 m 80 A (1)
1. Current limited by package
3
Standard threshold drive 2
1
100% avalanche tested TO-220
Application
Switching applications
Automotive
Figure 1. Internal schematic diagram
Description
This device is a 40 V N-channel STripFETTM VI
Power MOSFET based on the ST's proprietary
STripFETTM technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
Table 1. Device summary
Order code Marking Package Packaging
STP120N4F6 120N4F6 TO-220 Tube
May 2011 Doc ID 018846 Rev 1 1/13
www.st.com 13
Contents STP120N4F6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/13 Doc ID 018846 Rev 1
STP120N4F6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 40 V
VGS Gate-source voltage
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