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                                                                                       STP12NB30
                                                                                     STP12NB30FP
                         N-CHANNEL 300V - 0.34 - 12A TO-220/TO-220FP
                                              PowerMESHTM MOSFET

         TYPE               VDSS         RDS(on)    ID

    STP12NB30              300 V        < 0.40     12A
    STP12NB30FP            300 V        < 0.40     12A
s    TYPICAL RDS(on) = 0.34
s    EXCEPTIONAL dv/dt CAPABILITY
s    100% AVALANCHE TESTED                                                               3                           3
                                                                                     2                           2
s    VERY LOW INTRINSIC CAPACITANCES                                             1                           1
s    GATE CHARGE MINIMIZED
                                                                       TO-220                      TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-                   INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s DC-DC & DC-AC CONVERTERS FOR

  TELECOM, INDUSTRIAL AND CONSUMER
  ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS
     Symbol                          Parameter                                   Value                               Unit
                                                                 STP12NB30                   STP12NB30FP
       VDS        Drain-source Voltage (VGS = 0)                                  300                                 V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                 300                                 V
       VGS        Gate- source Voltage                                            

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