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                                                                                     STP16NE06L
                                                                                   STP16NE06L/FP
                                    N - CHANNEL ENHANCEMENT MODE
                               SINGLE FEATURE SIZETM POWER MOSFET
                                                                                                                   TARGET DATA
        TYPE               V DSS        R DS(on)      ID
STP16NE06L                 60 V        < 0.12        16 A
STP16NE06LFP               60 V        < 0.12        11 A

s   TYPICAL RDS(on) = 0.09 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   175oC OPERATING TEMPERATURE
s   HIGH dV/dt CAPABILITY
                                                                                                 3                                 3
s   APPLICATION ORIENTED                                                                     2                                 2
    CHARACTERIZATION                                                                    1                                  1


DESCRIPTION                                                                TO-220                            TO-220FP
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and                        INTERNAL SCHEMATIC DIAGRAM
less critical alignment steps therefore a remark-
able manufacturing reproducibility.

APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION



ABSOLUTE MAXIMUM RATINGS
    Symbol                               Parameter                                               Value                     Unit
                                                                           STP16NE06L                    STP16NE06LFP
     V DS     Drain-source Voltage (V GS = 0)                                                     60                           V
     V DGR    Drain- gate Voltage (R GS = 20 k)                                                   60                           V
     V GS     Gate-source Voltage                                                                

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