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                                                                                     STP19N06L
                                                                                    STP19N06LFI
                              N - CHANNEL ENHANCEMENT MODE
                       LOW THRESHOLD POWER MOS TRANSISTOR

        TYPE              VDSS          R DS(on)        ID
STP19N06L                 60 V         < 0.1           19 A
STP19N06LFI               60 V         < 0.1           13 A

s   TYPICAL RDS(on) = 0.085 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
                                                                                    3                            3
s   LOW GATE CHARGE                                                             2                            2
                                                                            1                            1
s   LOGIC LEVEL COMPATIBLE INPUT
s   175 oC OPERATING TEMPERATURE
s   APPLICATION ORIENTED                                           TO-220                    ISOWATT220
    CHARACTERIZATION

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS                                                      INTERNAL SCHEMATIC DIAGRAM
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                                Value                        Unit
                                                                   STP19N06L               STP19N06LFI
     V DS      Drain-source Voltage (V GS = 0)                                      60                           V
     V DGR     Drain- gate Voltage (R GS = 20 k)                                    60                           V
     V GS      Gate-source Voltage                                                  

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