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                                                                                STP20N10
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR

        TYPE              VDSS          R DS(on)        ID
STP20N10                 100 V         < 0.12          20 A

s   TYPICAL RDS(on) = 0.09 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
s   LOW GATE CHARGE
                                                                                           3
s   HIGH CURRENT CAPABILITY                                                            2
                                                                                   1
s   175oC OPERATING TEMPERATURE
s   APPLICATION ORIENTED
    CHARACTERIZATION                                                     TO-220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS                             INTERNAL SCHEMATIC DIAGRAM
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                        Value                  Unit
     V DS      Drain-source Voltage (V GS = 0)                           100                    V
     V DGR     Drain- gate Voltage (R GS = 20 k)                         100                    V
     V GS      Gate-source Voltage                                      

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