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STP2N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE VDSS R DS(on) ID
STP2N60 600 V < 3.5 2.9 A
STP2N60FI 600 V < 3.5 2.2 A
s TYPICAL RDS(on) = 3.2
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s APPLICATION ORIENTED 2 2
1 1
CHARACTERIZATION
APPLICATIONS
TO-220 ISOWATT220
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP2N60 STP2N60FI
V DS Drain-source Voltage (V GS = 0) 600 V
V DGR Drain- gate Voltage (R GS = 20 k) 600 V
V GS Gate-source Voltage
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