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                                                                                             STP2N80
                                                                                            STP2N80FI
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR

        TYPE              VDSS          R DS(on)        ID
STP2N80                  800 V           <7            2.4 A
STP2N80FI                800 V           <7            1.5 A

s   TYPICAL RDS(on) = 5 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
                                                                                     3                           3
s   LOW INPUT CAPACITANCE                                                        2                          2
                                                                             1                          1
s   LOW GATE CHARGE
s   APPLICATION ORIENTED
    CHARACTERIZATION                                                TO-220                   ISOWATT220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
                                                                   INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                                 Value                      Unit
                                                                     STP2N80                STP2N80FI
     V DS      Drain-source Voltage (V GS = 0)                                       800                        V
     V DGR     Drain- gate Voltage (R GS = 20 k)                                     800                        V
     V GS      Gate-source Voltage                                                   

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