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                                                                                      STP33N10
                                                                                     STP33N10FI
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR

        TYPE              V DSS         R DS( on)        ID
STP33N10                 100 V        < 0.06            33 A
STP33N10FI               100 V        < 0.06            18 A

s   TYPICAL RDS(on) = 0.045 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
                                                                                 3                           3
s   LOW GATE CHARGE                                                          2                           2
                                                                         1                           1
s   HIGH CURRENT CAPABILITY
s   175oC OPERATING TEMPERATURE
s   APPLICATION ORIENTED                                        TO-220                    ISOWATT220
    CHARACTERIZATION

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS                                                   INTERNAL SCHEMATIC DIAGRAM
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                             Value                       Unit
                                                                STP33N10                STP33N10FI
     VD S      Drain-source Voltage (V GS = 0)                                   100                         V
     V DG R    Drain- gate Voltage (R GS = 20 k)                                 100                         V
     V GS      Gate-source Voltage                                               

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