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stp33n10


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                                                                                         STP33N10
                                                                                        STP33N10FI
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR

        TYPE              VDSS          R DS(on)        ID
STP33N10                 100 V         < 0.06          33 A
STP33N10FI               100 V         < 0.06          18 A

s   TYPICAL RDS(on) = 0.045 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
                                                                                    3                           3
s   LOW GATE CHARGE                                                             2                           2
                                                                            1                           1
s   HIGH CURRENT CAPABILITY
s   175oC OPERATING TEMPERATURE
s   APPLICATION ORIENTED                                           TO-220                    ISOWATT220
    CHARACTERIZATION

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS                                                      INTERNAL SCHEMATIC DIAGRAM
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                                Value                       Unit
                                                                   STP33N10                STP33N10FI
     V DS      Drain-source Voltage (V GS = 0)                                      100                         V
     V DGR     Drain- gate Voltage (R GS = 20 k)                                    100                         V
     V GS      Gate-source Voltage



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