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N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STP40N03L-20 30 V < 0.02 40 A
s TYPICAL RDS(on) = 0.016
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY 3
s APPLICATION ORIENTED 2
1
CHARACTERIZATION
APPLICATIONS TO-220
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 30 V
V DGR Drain- gate Voltage (R GS = 20 k) 30 V
V GS Gate-source Voltage
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