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N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
TYPE V DSS R DS(on) ID
STP40NE03L-20 30 V <0.020 40 A
s TYPICAL RDS(on) = 0.014
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE A 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
3
DESCRIPTION 2
1
This Power MOSFET is the latest development of
SGS-THOMSON unique "Single Feature SizeTM "
strip-based process. The resulting transistor TO-220
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 30 V
V DGR Drain- gate Voltage (R GS = 20 k) 30 V
V GS Gate-source Voltage
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