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                                                                                          STP4N100
                                                                                         STP4N100FI
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR

        TYPE              VDSS          R DS(on)        ID
STP4N100                1000 V         < 3.5            4A
STP4N100FI              1000 V         < 3.5           2.2 A

s   TYPICAL RDS(on) = 3.1 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
                                                                                     3                            3
s   LOW INPUT CAPACITANCE                                                        2                           2
                                                                             1                           1
s   LOW GATE CHARGE
s   APPLICATION ORIENTED
    CHARACTERIZATION                                                TO-220                    ISOWATT220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC INVERTERS FOR WELDING                                      INTERNAL SCHEMATIC DIAGRAM
  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLY (UPS)




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                                 Value                       Unit
                                                                    STP4N100                STP4N100FI
     V DS      Drain-source Voltage (V GS = 0)                                       1000                        V
     V DGR     Drain- gate Voltage (R GS = 20 k)                                     1000                        V
     V GS      Gate-source Voltage                                                   

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