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                                                                                                    STP4NB30
                                                                                                  STP4NB30FP
                           N-CHANNEL 300V - 1.8 - 4A - TO-220/TO-220FP
                                                 PowerMeshTM MOSFET

         TYPE               VDSS         RDS(on)            ID

    STP4NB30               300 V          <2            4A
    STP4NB30FP             300 V          <2            4A
s    TYPICAL RDS(on) = 1.8 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED                                                                        3                              3
                                                                                              2                              2
s    NEW HIGH VOLTAGE BENCHMARK                                                           1                              1
s    GATE CHARGE MINIMIZED
                                                                            TO-220                              TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-                       INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR TELECOM,

  INDUSTRIAL AND CONSUMER
  ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                         Value                      Unit
                                                                                STP4NB30                    STP4NB30FP
       VDS        Drain-source Voltage (VGS = 0)                                                      300                     V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                                     300                     V
       VGS        Gate- source Voltage                                                                

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