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>> Download stp50n06l-fi documenatation <<Text preview - extract from the document STP50N06L
STP50N06LFI
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE VDSS R DS(on) ID
STP50N06L 60 V < 0.028 50 A
STP50N06LFI 60 V < 0.028 27 A
s TYPICAL RDS(on) = 0.024
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s LOW GATE CHARGE 2 2
s)
1 1
s HIGH CURRENT CAPABILITY
s LOGIC LEVEL COMPATIBLE INPUT
t(
uc
s 175oC OPERATING TEMPERATURE TO-220 ISOWATT220
s APPLICATION ORIENTED
CHARACTERIZATION
d
APPLICATIONS
P ro
te
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
le
s INTERNAL SCHEMATIC DIAGRAM
REGULATORS
so
s
s DC-DC & DC-AC CONVERTERS
Ob
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
-
ct (s)
ABSOLUTE MAXIMUM RATINGS
o du
Pr
Symbol Parameter Value Unit
STP50N06L STP50N06LFI
e
let
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 k) 60 V
o
bs
V GS Gate-source Voltage
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